Authors:	J. Hofrichter, T. Morf, A. La Porta, B.J. Offrein, P. Mechet, G. Morthier, T. De Vries, H.J.S. Dorren, O. Raz
Title:	Inverting and Non-Inverting Operation of InP Microdisk Modulators
Format:	International Journal
Publication date:	5/2012
Journal/Conference/Book:	Electronics Letters
Editor/Publisher:	Institute of Electrical and Electronics Engineers ( IEEE ),
DOI:	10.1049/el.2012.0684
Citations:	Look up on Google Scholar
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Abstract

We report on the inverting and non-inverting operation of indium phosphide (InP) based microdisk modulators heterogeneously integrated on a silicon-on-insulator waveguide. The light transmitted through the waveguide can be modulated in an inverting and non–inverting manner depending on the bias conditions. We demonstrate static extinction ratios and dynamic operation of the device up to 2.5 Gb/s. Clean open eyes are shown and operation with a bit-error rate below 1×10–11 is demonstrated at 1.0 Gb/s for both operation modes a bias of only 1 Vpp.

Related Research Topics

• Die-to-wafer bonding technology (2003-2012)
• Integrated thin-film microcavity lasers (2002-2011)

Related Projects

• ICT: HISTORIC (Heterogeneous InP on Silicon Technology for Optical Routing and LogIC)