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Authors: E.M.P. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J-B Rodriguez, E. Tournie, W. Bogaerts, R. Baets, G. Roelkens
Title: Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm
Format: International Journal
Publication date: 1/2013
Journal/Conference/Book: Optics Express
Internal Reference: [N-1400]
Download: Download this Publication (2.1MB) (2.1MB)

Abstract

We present a silicon-on-insulator (SOI) based spectrometer
platform for a wide operational wavelength range. Both planar concave
grating (PCG, also known as echelle grating) and arrayed waveguide
grating (AWG) spectrometer designs are explored for operation in the
short-wave infrared. In addition, a total of four planar concave gratings are
designed to cover parts of the wavelength range from 1510 to 2300 nm.
These passive wavelength demultiplexers are combined with GaInAsSb
photodiodes. These photodiodes are heterogeneously integrated on SOI
with benzocyclobutene (DVS-BCB) as an adhesive bonding layer. The
uniformity of the photodiode characteristics and high processing yield,
indicate a robust fabrication process. We demonstrate good performance of
the miniature spectrometers over all operational wavelengths which paves
the way to on-chip absorption spectroscopy in this wavelength range.

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