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Authors: A. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepage, P. Absil, J. Van Campenhout, D. Van Thourhout
Title: Carrier Lifetime Assessment in Integrated Ge Waveguide Devices
Format: International Conference Proceedings
Publication date: 8/2015
Journal/Conference/Book: 12th International Conference on Group IV Photonics (GFP)
Volume(Issue): p.ThC2
Location: Vancouver, Canada
DOI: 10.1109/group4.2015.7305916
Citations: 1 (Dimensions.ai - last update: 28/2/2021)
1 (OpenCitations - last update: 15/2/2021)
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Abstract

Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 um wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2e19 cm-3.

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