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Ge(Sn) laser source on Si

Research Area: Heterogeneous integration technology for silicon photonics , Integrated lasers and LEDs , Silicon photonics for telecom, datacom and interconnect

Main Researcher: Ashwyn Srinivasan

Other people involved:

Related Research Projects

Publications

    International Journals

  1. Y. Yamamoto, L-W. Nien, G. Capellini, M. Virfilio, I. Costina, M. A. Schubert, W. Seifert, A. Srinivasan, R. Loo, G. Scappucci, D. Sabbagh, A. Hesse, J. Murota, T. Schroeder, B. Tillack, Photoluminescence of phosphorus atomic layer doped Ge grown on Si, Semiconductor Science and Technology, (2016).
  2. Y. Shimura, A. Srinivasan, R. Loo, Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers, ECS Journal of Solid State Science and Technology, 5(5), p.Q140-Q143 (2016)  Download this Publication (605KB).
  3. A. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepage, P. Absil, J. Van Campenhout, D. Van Thourhout, Extraction of Carrier Lifetime using Pump Probe Spectroscopy on Integrated Ge Waveguides, Applied Physics Letters, 108, p.211101 (2016).
  4. Yosuke Shimura, A. Srinivasan, D. Van Thourhout, Rik Van Deun, Marianna Pantouvaki, J. Van Campenhout, Roger Loo, Enhanced active P doping using high order Ge precursors leading to intense photoluminescence, Thin Solid Films, (2015).
      International Conferences

    1. A. Srinivasan, C. Porret, M. Pantouvaki, Y. Shimura, P. Geiregat, R. Loo, J. Van Campenhout, D. Van Thourhout, Analysis of Homogeneous Broadening in n-type doped Ge layers on Si for laser applications, accepted for publication in IEEE Photonics Conferece, United States,  (to be published).
    2. A. Srinivasan, C. Porret, M. Pantouvaki, Y. Shimura, P. Geiregat, R. Loo, J. Van Campenhout, D. Van Thourhout, Reduction of Optical Bleaching in Phosphorus doped Ge layers on Si, accepted for publication in IEEE Conference on Group IV Photonics, Germany,  (to be published).
    3. A. Srinivasan, A. Prabhulinga, C. Porret, Y. Shimura, D. Van Thourhout, M. Pantouvaki, R. Loo, J. Van Campenhout, Phosphorus doped Ge layers for optical applications, Atomically Controlled Processing for Ultra-large Scale Integration (invited), Germany, (2016).
    4. A. Srinivasan, M. Pantouvaki, Y. Shimura, C. Porret, R. Van Deun, R. Loo, D. Van Thourhout, J. Van Campenhout, Laser Annealed in-situ P-doped Ge for on-chip laser source applications, SPIE Photonics Europe, Belgium, (2016)  Download this Publication (118KB).
    5. R. Loo, A. Srinivasan, Y. Shimura, C. Porret, D. Van Thourhout, R. V. Deun, T. Stoica, D. Buca, J. Van Campenhout, Ge Epitaxial Growth in View of Optical Device Applications, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (invited), Japan, (2016).
    6. Y. Shimura, A. Srinivasan, D. Van Thourhout, R. V. Deun, M. Pantouvaki, J. Van Campenhout, R. Loo, High active Phosphorus concentration in in-situ doped Ge CVD layers using low growth temperature and high order Ge precursors: toward Group-IV optical interconnects, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (invited), Japan, (2016).
    7. Y. Shimura, A. Srinivasan, D. Van Thourhout, R. Van Deun, M. Pantouvaki, J. Van Campenhout, R. Loo, Enhancement of Active Phosphorus Concentration in Ge CVD layers in View of Group-IV Optical Interconnections using Low Temperature in-situ Doping and High Order Ge Precursors, International Symposium on EcoTopia Science 2015, (2015).
    8. Y Shimura, A. Srinivasan, D. Van Thourhout, R. Van Deun, M. Pantouvaki, J. Van Campenhout, R. Loo, Enhanced Ge Photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatuers, 2015 E-MRS Fall Meeting and Exhibit , (2015).
    9. A. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepage, P. Absil, J. Van Campenhout, D. Van Thourhout, Carrier Lifetime Assessment in Integrated Ge Waveguide Devices, 12th International Conference on Group IV Photonics (GFP), Canada, p.ThC2 (2015).
    10. Yosuke Shimura, A. Srinivasan, D. Van Thourhout, Rik Van Deun, Marianna Pantouvaki, J. Van Campenhout, Roger Loo, Low temperature in-situ P-doped Ge epitaxy using Ge2H6 in view of optical applications, The 9th International Conference On Silicon Epitaxy And Heterostructures, Canada, p.91-92 (2015)  Download this Publication (1.5MB).

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