| Authors: | Y. Shimura, A. Srinivasan, D. Van Thourhout, R. V. Deun, M. Pantouvaki, J. Van Campenhout, R. Loo | | Title: | High active Phosphorus concentration in in-situ doped Ge CVD layers using low growth temperature and high order Ge precursors: toward Group-IV optical interconnects | | Format: | International Conference Presentation | | Publication date: | 1/2016 | | Journal/Conference/Book: | 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
(invited)
| | Location: | Sendai, Japan | | Citations: | Look up on Google Scholar
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