| Authors: | A. Srinivasan, C. Porret, M. Pantouvaki, Y. Shimura, P. Geiregat, R. Loo, J. Van Campenhout, D. Van Thourhout | | Title: | Analysis of Homogeneous Broadening in n-type doped Ge layers on Si for laser applications | | Format: | International Conference Proceedings | | Publication date: | 10/2017 | | Journal/Conference/Book: | 30th Annual Conference of the IEEE Photonics Society (IPC)
| | Volume(Issue): | p.311-312 | | Location: | Lake Buena Vista, Florida, United States | | DOI: | 10.1109/ipcon.2017.8116120 | | Citations: | 1 (Dimensions.ai - last update: 17/11/2024)
1 (OpenCitations - last update: 19/4/2024)
Look up on Google Scholar
|
Abstract
The homogeneous broadening in Phosphorus doped
Ge layers is characterized using photoluminescence spectroscopy and absorption measurements. A broadening parameter ΓHOM=45meV due to carrier scattering effects was extracted leading to an estimated increase in threshold current density for Ge lasers by a factor >4. Related Research Topics
|
|
