| Authors: | G. Chen, J. Goyvaerts, S. Kumari, J. Van Kerrebrouck, M. Muneeb, S. Uvin, Yu, Yu, G. Roelkens | | Title: | Integration of high-speed GaAs metal-semiconductor-metal photodetectors by means of transfer printing for 850 nm wavelength photonic interposers | | Format: | International Journal | | Publication date: | 3/2018 | | Journal/Conference/Book: | Optics Express
| | Volume(Issue): | 26(5) p.6351-6359 | | DOI: | 10.1364/oe.26.006351 | | Citations: | 24 (Dimensions.ai - last update: 17/11/2024)
18 (OpenCitations - last update: 27/6/2024)
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Abstract
We propose and demonstrate the integration of 850 nm GaAs-based metal-semiconductor-metal (MSM) photodetectors (PDs) based on transfer printing for application in photonic interposers. Both devices that directly interface with a multimode optical fiber (with device dimensions of 70 μm x 70 μm) as well as devices that interface with a SiN waveguide layer through a grating coupler (with device dimensions of 30 μm × 30 μm) are demonstrated. The dark currents are measured to be 22 nA and 7.2 nA at 2 V bias for the larger and smaller PDs respectively. For 850 nm wavelength, the external responsivities are measured to be 0.117 A/W and 0.1 A/W at 2 V bias. 20 GHz bandwidth is measured. Open 40 Gb/s eye diagrams are realized. Related Research Topics
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