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Authors: A. Li, W. Bogaerts
Title: Using backscattering and backcoupling in silicon ring resonators as a new degree of design freedom
Format: International Journal
Publication date: 5/2019
Journal/Conference/Book: Lasers & Photonics Reviews
Volume(Issue): p.1800244 (18 pages)
DOI: 10.1002/lpor.201800244
Citations: 30 ( - last update: 16/6/2024)
3 (OpenCitations - last update: 19/4/2024)
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Silicon optical ring resonators are potentially valuable for many applications. Due to the limited design freedom (coupling coefficient and roundtrip length), the functionality and performance cannot always be fully explored and optimized. In addition, high-contrast silicon ring resonators suffer from parasitic coupling between the clockwise and counterclockwise modes as well as the parasitic coupling from the input to both circulating modes, which degrades or even distorts the response. In this paper, we give an overview of our work to harness these effects as additional design parameters to overcome the detrimental effects and realize novel functionalities in silicon ring resonators. Through simulations and experimental characterization, we show how the manipulation of backreflection and backcoupling enables various novel functions, including tunable Fano resonances with maximum slope rate over 700dB/nm, tunable electromagnetically induced transparency which slows light down over 1100ps, a single mode silicon ring resonator with a free spectral range over 150~nm and tuning efficiency over 11 times higher compared to that of a conventional silicon ring resonator, fundamental suppression of inevitable backscattering, spectral tuning, single sideband filtering, and ultra high Q / large finesse resonances.

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