| Authors: | J. Rahimi Vaskasi, M. Shahin, K. Van Gasse, G. Roelkens, G. Morthier | | Title: | Characterization of optical loss and carrier lifetime in integrated III-V/SOI distributed feedback lasers | | Format: | International Conference Presentation | | Publication date: | 11/2019 | | Journal/Conference/Book: | Annual Symposium of the IEEE Photonics Society Benelux Chapter
| | Editor/Publisher: | IEEE Photonics Society, | | Location: | Amsterdam, Netherlands | | Citations: | Look up on Google Scholar
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Abstract
Characterization of heterogeneously integrated III-V/SOI distributed feedback (DFB) lasers is reported. Based on the measurement results, the taper used to couple the light from the III-V active section to the Si waveguide underneath can lead to an optical loss of about 1 dB per taper. Moreover, heterogeneously integrated lasers based on an InAlGaAs multi-quantum wells (MQWs) active region have at least 50 % shorter carrier lifetime than their InGaAsP counterparts. Related Research Topics
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