Authors:	D. Colucci, M. Baryshnikova, Y. Shi, Y. Mols, M. Muneeb, Y. De Koninck, D. Yudistira, M. Pantouvaki, J. Van Campenhout, R. Langer, D. Van Thourhout, B. Kunert
Title:	Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering
Format:	International Journal
Publication date:	4/2022
Journal/Conference/Book:	Optics Express
Editor/Publisher:	Optica Publishing Group,
Volume(Issue):	30(8) p.13510-13521
DOI:	10.1364/OE.454795
Citations:	17 (Dimensions.ai - last update: 17/11/2024) 8 (OpenCitations - last update: 11/11/2024) Look up on Google Scholar
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Abstract

We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. This allows controlling the fundamental lattice constant of the fully relaxed ternary nano-ridge which thereby serves as a tunable base for the integration of diverse device hetero-layers. To demonstrate the flexibility of this approach, we realized an O-band nano-ridge laser containing three In0.45Ga0.55As quantum wells, which are pseudomorphically strained to an In0.25Ga0.75As nano-ridge base. The demonstration of an optically pumped nano-ridge laser operating around 1300 nm underlines the potential of this cost-efficient and highly scalable integration approach for silicon photonics.

Related Research Topics

• IIIV microlasers epitaxially grown on silicon

Related Projects

• ERC-AdG: NARIOS (Nano-Ridge Engineering for Densely Integrated III-V Lasers Directly Grown on Silicon)