| Authors: | Z. Ouyang, D. Colucci, E.M.B. Fahmy, A. Yimam, J. Van Campenhout, B. Kunert, D. Van Thourhout | | Title: | Compact 1.31 μm-emission In0.45Ga0.55As/ In0.25Ga0.75As photonic crystal nano-ridge laser monolithically grown on 300 mm silicon substrate | | Format: | International Conference Presentation | | Publication date: | 6/2024 | | Journal/Conference/Book: | SPIE Europe 2024
| | Volume(Issue): | p.130120D | | Location: | strasbourg, France | | Citations: | Look up on Google Scholar
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Abstract
Compact on-chip sources with efficient emission in the O-band are a critical component for the silicon photonics platform to realize its full potential in telecom and datacom applications. III-V semiconductors are still the main candidates for realizing such sources but their significant lattice mismatch with silicon remains a fundamental challenge hampering monolithic integration. Hence, we need innovative methods to confine defects outside the active device region. Here, an ultra-compact 1.31 μm-emission photonic crystal (PC) nano-ridge laser selectively area grown on a trench-patterned silicon substrate using aspect ratio trapping and nano-ridge engineering is demonstrated. Lasing at a remarkably low pumping threshold of 4.42 kW/cm2 and with a cavity length as small as 50 μm was realized with the PC nano-ridge device. The laser exhibits a lasing peak with side-mode suppression ratio of over 17 dB and a linewidth as narrow as 1.47 nm under 22.91 kW/cm2 pulsed pumping. This PC nano-ridge laser opens a novel route to realize a compact light source for future high-density and massively scalable silicon photonic integrated circuits in the field of data communication. Related Research Topics
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