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Authors: M. Shahin, K. Ma, A. Abbasi, G. Roelkens, G. Morthier
Title: 45 Gbps Direct Modulation of Two-Section InP-on-Si DFB Laser Diodes
Format: International Journal
Publication date: 4/2018
Journal/Conference/Book: IEEE Photonics Technology Letters
Editor/Publisher: IEEE, 
Volume(Issue): 30(8) p.685-687
DOI: 10.1109/LPT.2018.2811906
Citations: 2 (Dimensions.ai - last update: 26/10/2020)
1 (OpenCitations - last update: 19/10/2020)
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Abstract

Two-section heterogeneously integrated InP-on-Si DFB laser diodes are demonstrated. In the modulation response, the relaxation oscillation frequency of 10 GHz is followed by a second resonance to achieve nearly 25 GHz 3-dB modulation bandwidth and 45 Gbps NRZ-OOK transmission.

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