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High-speed direct modulation III-V/Si DFB lasers

Research Area: Integrated lasers and LEDs , Heterogeneous integration technology for silicon photonics , Silicon photonics for telecom, datacom and interconnect

High-speed directly modulated lasers integrated on a silicon waveguide circuit are of paramount importance for optical interconnect applications. Therefore, there is substantial research effort focusing on the high-speed direct modulation characteristics of semiconductor lasers. Several factors limit the upper frequency at which a laser diode can be modulated. Relaxation oscillations limit the modulation bandwidth in classical laser diodes. In large signal modulation over long distance chirp, overshoot, delay time, rise and fall times should be considered.Our research concerns the design and fabrication of single mode directly modulated semiconductors lasers on a silicon platform, with enhanced modulation bandwidth up to 30 GHz by using detuned loading and photon-photon resonances. We are working both on InP-based devices and GaAs-based quantum dot materials integrated on top of the silicon waveguide circuit by means of adhesive bonding.


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Publications

    International Journals

  1. A. Abbasi, S. Keyvaninia, J. Verbist, X. Yin, J. Bauwelinck, F. Lelarge, G-H. Duan, G. Roelkens, G. Morthier, 43 Gb/s NRZ-OOK Direct Modulation of a Heterogeneously Integrated InP/Si DFB Laser, Journal of Lightwave Technology (invited), 35(6), p.1235-1240 (2017).
  2. A. Abbasi, C. Spatharakis, G. Kanakis, N. Sequeira André, H. Louchet, A. Katumba, J. Verbist, H. Avramopoulos, P. Bienstman, X. Yin, J. Bauwelinck, G. Roelkens, G. Morthier, High Speed Direct Modulation of a Heterogeneously Integrated InP/SOI DFB Laser, Journal of Lightwave Technolgy (invited), 34(8), p.1683-1687 (2016)  Download this Publication (695KB).
  3. A. Abbasi, J. Verbist, J. Van kerrebrouck, F. Lelarge, G. H. Duan, x. Yin, J. Bauwelinck, G. Roelkens, G. Morthier, 28 Gb/s Direct Modulation Heterogeneously Integrated C-band InP/SOI DFB Laser, Optics Express, 23(20), p.26479-26485 (2015)  Download this Publication (2.5MB).
      International Conferences

    1. A. Abbasi, B. Moeneclaey, J. Verbist, X. Yin, J. bauwelinck, G. Roelkens, G. Morthier, 56 Gb/s Direct Modulation of an InP-on-Si DFB Laser Diode, Optical Interconnect Conference, United States, (2017)  Download this Publication (392KB).
    2. A. Abbasi, H. Chen, J. Verbist, X.Yin, Y. Bauwelinck, G. Roelkens, G. Morthier, Chirp Managed Optical Link based on a Directly Modulated InP/Si DFB Laser, European Conference on Integrated Optics (ECIO) 2017, Netherlands, p.T5.5 (2017)  Download this Publication (577KB).
    3. A. Abbasi, H. Chen, J. Verbist, X. Yin, J. Bauwelinck, G. Roelkens, G. Morthier, Toward Si photonics based transceivers using directly modulated heterogeneously integrated DFB lasers, Proceedings Symposium IEEE Photonics Society Benelux, Belgium, p.11-14 (2016)  Download this Publication (360KB).
    4. A. Abbasi, J. Verbist, X. Yin, F. Lelarge, G. H. Duan, J. Bauwelinck, G. Roelkens, G. Morthier, Enhanced Modulation Bandwidth of Heterogeneously Integrated III-V-on-silicon DFB Laser for 40 Gb/s NRZ-OOK Direct Modulation, International Semiconductor Laser Conference (ISLC), Japan, (2016)  Download this Publication (2.1MB).
    5. Z. Wang, Marianna Pantouvaki, G. Morthier, Clement Merckling, Joris Van Campenhout, D. Van Thourhout, G. Roelkens, Heterogeneous Integration of InP Devices on Silicon, the 28th International Conference on Indium Phosphide and Related Materials (IPRM) (invited), Japan, p.paper ThD1-1 (2016)  Download this Publication (379KB).
    6. A. Abbasi, J. Verbist, J. Van kerrebrouck, F. Lelarge, G. H. Duan, G. Roelkens, G. Morthier, 28 Gb/s Direct Modulation Heterogeneously Integrated InP/Si DFB Laser , ECOC, Spain, p.paper We.2.5.2 (2015)  Download this Publication (420KB).

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