| Authors: | J. Zhang, B. Haq, J. O'Callaghan, A. Gocalinska, E. Pelucchi, A.J. Trindade, B. Corbett, G. Morthier, G. Roelkens | | Title: | Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser | | Format: | International Journal | | Publication date: | 4/2018 | | Journal/Conference/Book: | Optics Express
| | Editor/Publisher: | , | | Volume(Issue): | 26(7) p.8821-8830 | | Location: | United States | | DOI: | 10.1364/oe.26.008821 | | Citations: | 109 (Dimensions.ai - last update: 17/11/2024)
86 (OpenCitations - last update: 27/6/2024)
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Abstract
An electrically-pumped DFB laser integrated on and coupled to a silicon waveguide circuit is demonstrated by transfer printing a 40 x 970 um2 III-V coupon, defined on a III-V epitaxial wafer. A second order grating defined in the silicon device layer with a period of 477 nm and a duty cycle of 75% was used for realizing single mode emission, while an adiabatic taper structure is used for coupling to the silicon waveguide layer. 18 mA threshold current and a maximum single-sided waveguide-coupled output power above 2 mW is obtained at 20C. Single mode operation around 1550 nm with > 40 dB side mode suppression ratio (SMSR) is realized. This new integration approach allows for the very efficient use of the III-V material and the massively parallel integration of these coupons on a silicon photonic integrated circuit wafer. It also allows for the intimate integration of III-V opto-electronic components based on different epitaxial layer structures. Related Research Topics
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