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Authors: J. Zhang, B. Haq, J. O'Callaghan, A. Gocalinska, E. Pelucchi, A.J. Trindade, B. Corbett, G. Morthier, G. Roelkens
Title: Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser
Format: International Journal
Publication date: 4/2018
Journal/Conference/Book: Optics Express
Volume(Issue): 26(7) p.8821-8830
Location: United States
DOI: 10.1364/oe.26.008821
Citations: 104 ( - last update: 19/5/2024)
24 (OpenCitations - last update: 19/4/2024)
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An electrically-pumped DFB laser integrated on and coupled to a silicon waveguide circuit is demonstrated by transfer printing a 40 x 970 um2 III-V coupon, defined on a III-V epitaxial wafer. A second order grating defined in the silicon device layer with a period of 477 nm and a duty cycle of 75% was used for realizing single mode emission, while an adiabatic taper structure is used for coupling to the silicon waveguide layer. 18 mA threshold current and a maximum single-sided waveguide-coupled output power above 2 mW is obtained at 20C. Single mode operation around 1550 nm with > 40 dB side mode suppression ratio (SMSR) is realized. This new integration approach allows for the very efficient use of the III-V material and the massively parallel integration of these coupons on a silicon photonic integrated circuit wafer. It also allows for the intimate integration of III-V opto-electronic components based on different epitaxial layer structures.

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