Authors:	Y. Xing, J. Dong, S. Dwivedi, U. Khan, W. Bogaerts
Title:	Accurate Extraction of Fabricated Geometry Using Optical Measurement
Format:	International Journal
Publication date:	10/2018
Journal/Conference/Book:	Photonics Research
Editor/Publisher:	OSA,
Volume(Issue):	6 (11) p.1008-1020
DOI:	10.1364/PRJ.6.001008
Citations:	49 (Dimensions.ai - last update: 14/4/2024) 8 (OpenCitations - last update: 19/4/2024) Look up on Google Scholar
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Abstract

We experimentally demonstrate extraction of silicon waveguide geometry with sub-nanometer accuracy using optical measurements. Effective and group indices of silicon on insulator (SOI) waveguides are extracted from the optical measurements. An accurate model linking the geometry of an SOI waveguide to its effective and group indices is used to extract the linewidths and thicknesses within respective errors of 0.37 nm and 0.26 nm on a die fabricated by the IMEC multi-project wafer (MPW) services. A detailed analysis of the setting of the bounds for the effective and group indices is presented to get the right extraction with improved accuracy.

Related Research Topics

• Variability Aware Design
• Compact Circuit Models and Extraction

Related Projects

• FWO: G013815N-ScaleModel (Scalable behavioral models for large-scale silicon photonics)
• VLAIO: MEPIC (Model extraction to enable first-time right photonics integrated circuit design)