Authors:	J. Goyvaerts, S. Kumari, S. Uvin, J. Zhang, R. Baets, A. Gocalinska, E. Pelucchi, B. Corbett, G. Roelkens
Title:	Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications
Format:	International Journal
Publication date:	7/2020
Journal/Conference/Book:	Optics Express
Volume(Issue):	28(14) p.21275-21285
DOI:	10.1364/OE.395796
Citations:	28 (Dimensions.ai - last update: 17/11/2024) 21 (OpenCitations - last update: 27/6/2024) Look up on Google Scholar
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Abstract

We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.

Related Research Topics

• Siliconnitride photonic integrated circuit platform
• Transfer printing technology

Related Projects

• ECSEL: MICROPRINCE (micro transfer printing on 200mm wafers)
• H2020: PIX4Life (Silicon nitride photonic integrated circuit pilot line for life science applications in the visible range)