Authors:	J. Zhang, S. Qin, L. Bogaert, I. Krestnikov, K. Morozov, J. Rimbock, A. Farrel, R. Loi, D. Gomez, P. Ossieur, G. Lepage, P. Verheyen, J. Van Campenhout, G. Morthier, G. Roelkens
Title:	Micro-transfer-printed O-band GaAs QD-on-Si DFB Laser on an advanced silicon photonics platform
Format:	International Conference Proceedings
Publication date:	4/2023
Journal/Conference/Book:	European Conference on Integrated Optics
Location:	Twente, Netherlands
Citations:	Look up on Google Scholar
Download:	(657KB)

Abstract

We present wafer-scale micro-transfer printing of III-V devices on an advanced silicon photonics platform. Following this process flow, a GaAs QD-on-Si DFB laser is demonstrated. The resulting device exhibits single mode operation at 1300 nm with about 0.7 mW single-side waveguide-coupled output power and a side-mode-suppression-ratio of 44 dB at 40 °C.

Related Research Topics

• GaAs on Si lasers for optical interconnect applications
• Fast and widely tunable III-V/SOI DFB and DBR lasers
• Transfer printing technology

Related Projects

• H2020: CALADAN (Micro assembled Terabit/s capable optical transceivers for Datacom applications)
• ESA: ProtoBIX (Optical I/O for space applications)