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Authors: M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, G. Roelkens
Title: Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8um
Format: International Journal
Publication date: 5/2013
Journal/Conference/Book: Optics Express
Editor/Publisher: Optical Society of America, 
Volume(Issue): 21(10) p.11659-11669
DOI: 10.1364/OE.21.011659
Citations: 107 ( - last update: 14/7/2024)
77 (OpenCitations - last update: 10/5/2024)
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The design and characterization of silicon-on-insulator midinfrared spectrometers operating at 3.8ìm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk
characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm.

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