Authors: | M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, G. Roelkens | Title: | Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8um | Format: | International Journal | Publication date: | 5/2013 | Journal/Conference/Book: | Optics Express
| Editor/Publisher: | Optical Society of America, | Volume(Issue): | 21(10) p.11659-11669 | DOI: | 10.1364/OE.21.011659 | Citations: | 111 (Dimensions.ai - last update: 8/12/2024) 77 (OpenCitations - last update: 10/5/2024) Look up on Google Scholar
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Abstract
The design and characterization of silicon-on-insulator midinfrared spectrometers operating at 3.8ìm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk
characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm. Related Research Topics
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