Authors:	J. Goyvaerts, S. Kumari, S. Uvin, J. Zhang, R. Baets, A. Gocalinska, E. Pelucchi, B. Corbett, G. Roelkens
Title:	Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits
Format:	International Conference Presentation
Publication date:	10/2020
Journal/Conference/Book:	Annual Conference of the IEEE Photonics Society
Editor/Publisher:	IEEE,
Volume(Issue):	p.1-2
Location:	Vancouver, Canada
DOI:	10.1109/IPC47351.2020.9252495
Citations:	Look up on Google Scholar
Download:	(489KB)

Abstract

We demonstrate the integration of GaAs p-i-n photodiodes onto silicon nitride grating couplers by means of transfer-printing. Dark current below 20 pA and waveguide-coupled responsivities of 0.30 A/W are obtained. The detectors are integrated with an on-chip near-infrared spectrometer.

Related Research Topics

• GaAs VCSEL integration on SiN waveguide circuits
• SiN biosensors operating in the visible
• Siliconnitride photonic integrated circuit platform
• Transfer printing technology

Related Projects

• ECSEL: MICROPRINCE (micro transfer printing on 200mm wafers)
• H2020: PIX4Life (Silicon nitride photonic integrated circuit pilot line for life science applications in the visible range)