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Authors: J. Zhang, Y. Liu, A. Uzun, H. Li, E.Delli, L. Bogaert, S. Qin, K. Morozov, S. Mikhrin, J. Rimbock, R. Loi, P. Ossieur, G. Lepage, P. Verheyen, D. Velenis, C. Marchese, J. Van Campenhout, G. Morthier, G. Roelkens
Title: Micro-Transfer-Printed O-Band GaAs QD-On-Si Widely Tunable Laser
Format: International Conference Proceedings
Publication date: 4/2024
Journal/Conference/Book: European Conference on Integrated Optics
Editor/Publisher: Springer, Cham, 
Volume(Issue): 402 p.32-36
Location: Achen, Germany
DOI: https://doi.org/10.1007/978-3-031-63378-2_6
Citations: Look up on Google Scholar

Abstract

We present an O-band GaAs QD-on-Si integrated widely tunable laser realized by micro-transfer-printing a prefabricated GaAs SOA coupon on an advanced silicon photonics wafer. The resulting device exhibits single mode operation with >45 dB side-mode-suppression-ratio over a 30 nm wavelength tuning range in the O-band. The waveguide-coupled power is measured to be around 3.5 mW.

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